Formation of quantum wires and dots on InP(001) by As/P exchange
Identifieur interne : 010061 ( Main/Repository ); précédent : 010060; suivant : 010062Formation of quantum wires and dots on InP(001) by As/P exchange
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Abstract
We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2×4 surface with a length of over 1 μm and flat top 2×4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2×4 to 4×2 and the nanowires transform into dots with a rectangular base and flat top. © 2001 American Institute of Physics.
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Ballet</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Salamo, G J" uniqKey="Salamo G">G. J. Salamo</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0249905</idno><date when="2001-06-15">2001-06-15</date><idno type="stanalyst">PASCAL 01-0249905 AIP</idno><idno type="RBID">Pascal:01-0249905</idno><idno type="wicri:Area/Main/Corpus">011130</idno><idno type="wicri:Area/Main/Repository">010061</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>STM</term><term>Semiconductor growth</term><term>Semiconductor quantum dots</term><term>Semiconductor quantum wires</term><term>Surface reconstruction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8105E</term><term>8107V</term><term>8115H</term><term>6835B</term><term>6172C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Fil quantique semiconducteur</term><term>Point quantique semiconducteur</term><term>Epitaxie jet moléculaire</term><term>Croissance semiconducteur</term><term>STM</term><term>Reconstruction surface</term><term>Recuit</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. 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